Features
- Very low actuation voltage (5 V typical)
- Extremely low quiescent current (<10 nA)
- High isolation
- Low insertion loss
- Coplanar waveguide ports
- High linearity
- Hermetically sealed
Applications
- Automated test equipment
- Antenna reconfiguration
- Antenna beam steering
- Controllable phase shifter
- Phase arrays
- Controllable attenuator
General Description
MEMS switch with lateral motion of the actuation electrodes and of the contacts. Two contact pairs are connected in series for high isolation within a broad frequency range. The device is hermetically sealed by wafer level packaging. It is operated by 5 Volt actuation voltage because of its very large actuation electrode area that is achieved by a deep reactive ion etching. High contact force and high force for contact separation ensure a good contact resistance repeatability and reliability. Since no dielectric material is used in the actuation system, no charging occurs.
The switch consists of a silicon substrate that contains the active MEMS part, the wiring, the contacts and the RF lines and of a silicon cap. The cap is attached by die glass bonding at wafer level during the wafer fabrication.
