Low Actuation Voltage RF-MEMS Switch for DC to 5 GHz (SPST)



  • Very low actuation voltage (5 V typical)
  • Extremely low quiescent current (<10 nA)
  • High isolation
  • Low insertion loss
  • Coplanar waveguide ports
  • High linearity
  • Hermetically sealed


  • Automated test equipment
  • Antenna reconfiguration
  • Antenna beam steering
  • Controllable phase shifter
  • Phase arrays
  • Controllable attenuator

General Description

MEMS switch with lateral motion of the actuation electrodes and of the contacts. Two contact pairs are connected in series for high isolation within a broad frequency range. The device is hermetically sealed by wafer level packaging. It is operated by 5 Volt actuation voltage because of its very large actuation electrode area that is achieved by a deep reactive ion etching. High contact force and high force for contact separation ensure a good contact resistance repeatability and reliability. Since no dielectric material is used in the actuation system, no charging occurs.

The switch consists of a silicon substrate that contains the active MEMS part, the wiring, the contacts and the RF lines and of a silicon cap. The cap is attached by die glass bonding at wafer level during the wafer fabrication.